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DMN2016LFG
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
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Low On-Resistance
Low Gate Threshold Voltage
V (BR)DSS
20V
R DS(on) max
18m Ω @ V GS = 4.5V
30m Ω @ V GS = 1.8V
I D
T A = 25°C
5.2A
4.0A
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Low Input Capacitance
Fast Switching Speed
ESD Protected Gate
Lead, Halogen, and Antimony Free, RoHS Compliant (Note 1)
"Green" Device (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
Mechanical Data
This new generation MOSFET has been designed to minimize the on-
state resistance (R DS(on) ) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
? Power management functions
? Battery Pack
? Load Switch
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Case: U-DFN3030-8
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram Below
Weight: 0.0172 grams (approximate)
5
6
7
8
8
7
6
5
U-DFN3030-8
D1/D2
G2
S2
G1
S1
4
3
2
1
1
2
3
4
ESD PROTECTED TO 2kV
Top View
Bottom View
Bottom View
Top View
Ordering Information (Note 6)
Pin Configuration
Equivalent Circuit
Notes:
Part Number
DMN2016LFG-7
1. No purposefully added lead. Halogen and Antimony Free.
Case
U-DFN3030-8
Packaging
3000 / Tape & Reel
2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com
Marking Information
N20 = Product Type Marking Code
YYWW = Date Code Marking
YY = Last digit of year (ex: 09 for 2009)
N20
WW = Week code (01 to 53)
DMN2016LFG
Document number: DS32053 Rev. 3 - 2
1 of 6
www.diodes.com
January 2012
? Diodes Incorporated
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